NCE6045G mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 60V,ID =45A RDS(ON) < 13mΩ @ VGS=10V (Typ:10mΩ) RDS(ON) < 17mΩ @ VGS=4.5V (Typ:13mΩ)
* High density cell design for ultra low Rdson
* Fully characteri.
General Features
* VDS = 60V,ID =45A RDS(ON) < 13mΩ @ VGS=10V (Typ:10mΩ) RDS(ON) < 17mΩ @ VGS=4.5V (Typ:13mΩ)
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The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 60V,ID =45A RDS(ON) < 13mΩ @ VGS=10V (Typ:10mΩ) RDS(ON) < 17mΩ .
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